BXY42-T Datasheet | Infineon

BXY42 Hi Rel Silicon PIN Diode T T1 - - - - - Hi Rel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals Very low capacitance Hermetically sealed microwave package Space Qualified ESA/SCC Detail Spec. No.: 5513/017 Type Variant No.s 01 to 02 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BXY42-T (ql) BXY42-T1 (ql) Marking Ordering Code see below Pin Configuration Package T T1 1 1 2 2 (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702X143 on request on request Q62702X168 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BXY42 Maximum Ratings Parameter Reverse Voltage Peak Forward Current 1) Power Dissipation BXY42-T 2) 3) Symbol VR IFM Ptot Values 50 5 600 350 Unit V A m W BXY42-T1 Operating Temperature Range Storage Temperature Range Soldering Temperature Junction Temperature Thermal Resistance Junction-Case BXY42-T BXY42-T1 4) Top Tstg Tsol Tj Rth(j-c) -55 to +175 -65 to +175 +250 175 200 350 °C °C °C °C K/W Notes.: 1.) At tp = 1,0µs, Duty Cycle=0,001% 2.) At TCASE = 55 °C. For TCASE > 55 °C derating is required. 3.) At TCASE = 52,5 °C. For TCASE > 52,5 °C derating is required. 4.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have elapsed. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter DC Characteristics Reverse Current 1 VR1=50V Reverse Current 2 VR2=40V Forward Voltage IF=100m A VF 0,97 1,1 V IR2 5 n A IR1 10 µA Symbol min. Values typ. max. Unit Semiconductor Group 2 of 5 Draft B, September 99 BXY42 Electrical Characteristics (continued) Parameter AC Characteristics Total Capacitance VR=20V; f=1MHz Forward Resistance 1 f=100MHz, IF1=1m A Forward Resistance 2 f=100MHz, IF2=10m A Minority Carrier Lifetime IF=10m A, IR=6m A, IR=3m A τL 35 50 ns RF2 1...