BXY42 Datasheet | Siemens Semiconductor Group

Features - - - - - - Hi Rel Discrete and Microwave Semiconductor PIN Diode for high speed switching of RF signals Very low capacitance Hermetically sealed microwave package qualified ESA/SCC Detail Spec. No.: 5513/017 Electrostatic discharge sensitive device, observe handling precautions! T BXY 42 ESD: T1 Type BXY 42-T (ql) BXY 42-T1 (ql) Marking - Ordering Code see below see below Pin Configuration Package T T1 (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X143 H: High Rel Quality, S: Space Quality, Ordering Code: on request Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702X168 (see Chapter Order Instructions for ordering example) Semiconductor Group Draft A03 1998-04-01 BXY 42 Table 1 Parameter Maximum Ratings Symbol 1) Limit Values 50 5 600 350 Unit V A m W Reverse voltage Peak forward current Power dissipation BXY 42-T BXY 42-T1 Operating temperature range Storage temperature range Soldering temperature Junction temperature Thermal resistance junction-case BXY 42-T BXY 42-T1 1) VR IFM Ptot Top Tstg Tsol Tj Rth(j-c) - 55 to + 150 - 65 to + 175 + 250 175 200 350 °C °C °C °C K/W At tp = 1.0 ms, duty cycle = 0.001%. Semiconductor Group Draft A03 1998-04-01 BXY 42 Electrical Characteristics Table 2 Parameter Reverse current 1 VR1 = 50 V Reverse current 2 DC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.97 max. 10 5 1.1 m A n A V Unit IR1 IR2 VF VR2 = 40 V Forward voltage IF = 100 m A Table 3 Parameter Total capacitance VR = 50 V, f = 1 MHz Forward resistance f = 100 MHz, IF1 = 1 m A Forward resistance f = 100 MHz, IF2 = 10 m A Minority carrier lifetime IF = 10 m A, IR = 6 m A, IR = 3 m A AC Characteristics at TA = 25 °C unless otherwise specified Symbol min. Limit Values typ. 0.20 2 1 50 max. 0.24 3.5 2.5 p F W W ns 35...