CFY27-P Datasheet | Infineon

CFY27 Hi Rel Ku-Band Ga As General Purpose MESFET - - - - - - - Hi Rel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers For frequencies from 500 MHz to 20 GHz Hermetically sealed microwave package High gain, medium power ponent Under Development Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 06 and 07 foreseen (tbc.) ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D 4 S Package CFY27-38 (ql) CFY27-P (ql) - see below Micro-X CFY27-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62703F121 on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 9 Draft D, September 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 9 11 - 6... + 0.5 420 5 + 20 (tbc.) 175 - 65... + 175 900 230 Unit V V V m A m A d Bm °C °C m W °C Rth JS ≤ 150 (tbc.) K/W 1) For VDS ≤ 5 V. For VDS > 5 V, derating is required. 2) At TS = + 40 °C. For TS > + 40 °C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor...