CFY66 Datasheet | Infineon

CFY66 Hi Rel K-Band Ga As Super Low Noise HEMT - - Hi Rel Discrete and Microwave Semiconductor Conventional Al Ga As/Ga As HEMT (For new design we remend to use our pseudo-morphic HEMT CFY67) For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec. No.: 5613/002, Type Variant No.s 01 to 04 - - - - - 1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D 4 S Package CFY66-08 (ql) CFY66-08P (ql) CFY66-10 (ql) CFY66-10P (ql) - see below Micro-X CFY66-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 3.5 4.5 - 3... + 0.5 60 2 + 10 150 - 65... + 150 200 230 Unit V V V m A m A d Bm °C °C m W °C Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: Rth JS ≤ 515 (tbc.) K/W 1) For VDS ≤ 2 V. For VDS > 2 V, derating is required. 2) At TS = + 47 °C. For TS > + 47 °C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor...