CFY66-10 - HiRel K-Band GaAs Super Low Noise HEMT

Product Overview

Infineon Technologies AG

Part number	CFY66-10
Manufacturer	Infineon Technologies AG
File Size	551.83 KB
Description	HiRel K-Band GaAs Super Low Noise HEMT
Datasheet	CFY66-10 Datasheet
Additional preview pages of the CFY66-10 datasheet.

📁 Similar Datasheet

CFY25 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25 - HiRel X-Band GaAs MOSFET (Infineon)
CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20 - HiRel X-Band GaAs MOSFET (Infineon)
CFY25-20P - HiRel X-Band GaAs MOSFET (Infineon)
CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-23 - HiRel X-Band GaAs MOSFET (Infineon)

Other Datasheets by Infineon Technologies AG

Published: Mar 23, 2005 |