Download the HYB18T1G160AF datasheet PDF.
This datasheet also covers the HYB-18T variant, as both devices belong to the same 1 gbit ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.
General Description
and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Key Features
High Performance:
-5 -400 -3.7 -533 -3S -667 -3
1Gb DDR2 SDRAM
Speed Sorts DDR2 DDR2 DDR2 DDR2
-667
Units tck MHz Mb/s/pin
Bin (CL-tRCD-TRP)
max. Clock Frequency
3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60 333 667 4 12 12 45 57
Data Rate CAS Latency (CL) tRCD tRP tRAS tRC
tck ns ns ns ns.
1.8V ± 0.1V Power Supply 1.8 V ± 0.1V (SSTL_18) compatible) I/O.
DRAM organisations with 4, 8 and 16 data in/outputs.
Full PDF Text Transcription for HYB18T1G160AF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HYB18T1G160AF. For precise diagrams, and layout, please refer to the original PDF.
D a t a S he et , V 1. 0 2 , M a y 2 0 0 4 H Y B 1 8 T 1 G 4 00 A F H Y B 1 8 T 1 G 8 00 A F H Y B 1 8 T 1 G 1 60 A F 1 G b i t D D R 2 S D R AM M e m o r y P r o d u c t...
HYB18T1G160AF Datasheet
