IPB039N10N3G Description
IPB039N10N3 G OptiMOS™3 Power-Transistor.
IPB039N10N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- High current capability
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G
- case Thermal resistance, junction
- ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) 0.7 62 40 K/W