IPB039N10N3G Datasheet | Infineon

IPB039N10N3 G OptiMOS™3 Power-Transistor Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - High current capability - 175 °C operating temperature - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1) for target application - Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G Product Summary V DS R DS(on),max ID 100 3.9 160 V mΩ A Package Marking PG-TO263-7 039N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation...