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IPB039N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB039N10N3 G
Product Summary V DS R DS(on),max ID 100 3.9 160 V mΩ A
Package Marking
PG-TO263-7 039N10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature
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IPB039N10N3G Datasheet
