IPB039N10N3
IPB039N10N3 is Power Transistor manufactured by Infineon.
- Part of the IPB039N10N3G comparator family.
- Part of the IPB039N10N3G comparator family.
OptiMOS™3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- High current capability
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
Type
IPB039N10N3 G
IPB039N10N3 G
Product Summary V DS R DS(on),max ID
100 V 3.9 mΩ 160 A
Package Marking
PG-TO263-7 039N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E...
