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IPI041N12N3G Datasheet Power-transistor

Manufacturer: Infineon Technologies AG

Overview: IPP041N12N3 G OptiMOSTM3 Power-Transistor.

IPI041N12N3G datasheet preview

Datasheet Details

Part number	IPI041N12N3G
Manufacturer	Infineon Technologies AG
File Size	873.00 KB
Description	Power-Transistor
Datasheet	IPI041N12N3G_InfineonTechnologiesAG.pdf

Key Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant, halogen free.
Qualified according to JEDEC1) for target.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IPI041N12N3	Power Transistor	Infineon
	IPI041N12N3	N-Channel MOSFET	INCHANGE

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