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IPI041N12N3

Manufacturer: Infineon

IPI041N12N3 datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

IPI041N12N3 datasheet preview

IPI041N12N3 Datasheet Details

Part number IPI041N12N3
Datasheet IPI041N12N3 IPI041N12N3G Datasheet (PDF)
File Size 873.00 KB
Manufacturer Infineon
Description Power Transistor
IPI041N12N3 page 2 IPI041N12N3 page 3

IPI041N12N3 Overview

IPP041N12N3 G OptiMOSTM3 Power-Transistor.

IPI041N12N3 Key Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS pliant, halogen free
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • case R thJC
  • Thermal resistance
  • junction

IPI041N12N3 from other manufacturers

View IPI041N12N3 datasheet index

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo IPI041N12N3 N-Channel MOSFET INCHANGE
Infineon Technologies AG Logo IPI041N12N3G Power-Transistor Infineon Technologies AG
Infineon logo - Manufacturer

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