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IPI041N12N3 - Power Transistor

Download the IPI041N12N3 datasheet PDF. This datasheet also covers the IPI041N12N3G variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant, halogen free.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI041N12N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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IPI041N12N3G Power-Transistor Infineon Technologies AG
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IPI045N10N3G Power-Transistor Infineon Technologies
IPI04CN10N N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPI040N06N3 Power Transistor
IPI04CN10N Power-Transistor
IPI04CN10NG Power-Transistor
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IPI024N06N3 Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.