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IPP041N12N3G - Power-Transistor

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant, halogen free.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPP041N12N3G
Manufacturer Infineon Technologies AG
File Size 873.00 KB
Description Power-Transistor
Datasheet download datasheet IPP041N12N3G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.