Datasheet Summary
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-263) ID
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant, halogen free
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G IPB038N12N3 G
120 V 3.8 mW 120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package Marking
PG-TO263-3 038N12N
PG-TO262-3 041N12N
PG-TO220-3 041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous...
