IPU05N03LA Datasheet | Infineon

Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC for target application - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - 175 °C operating temperature - dv /dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 5.1 50 V mΩ A P-TO252-3-11 P-TO251-3-21 Type IPD05N03LA IPU05N03LA Package P-TO252-3-11 P-TO251-3-21 Ordering Code Q67042-S4144 Q67042-S4230 Marking 05N03LA 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 50 50 350 300 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=45 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 94 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 1.4 page 1 2004-02-04 IPD05N03LA IPU05N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=50 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=4.5 V, I D=30 A, SMD version V GS=10 V, I D=30 A V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 µA V 1.6 75 50 K/W Values typ. max. Unit 10 10 6.9 6.7 4.4 4.2 1 62 100 100...