IPU13N03LA Datasheet | Infineon

Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC for target applications - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - 175 °C operating temperature - dv /dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 13 30 V mΩ A P-TO252-3-11 P-TO251-3-21 Type IPD13N03LA IPU13N03LA Package P-TO252-3-11 P-TO251-3-21 Ordering Code Q67042-S4159 Q67042-S4160 Marking 13N03LA 13N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 30 30 210 60 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=24 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 46 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 1.4 page 1 2004-02-04 IPD13N03LA IPU13N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=20 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=20 A V GS=4.5 V, I D=20 A, SMD version V GS=10 V, I D=30 A V GS=10 V, I D=30 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 25 1.2 1.6 0.1 2 1 µA V 3.2 75 50 K/W Values typ. max. Unit 10 10 17.5 17.7 10.8 10.7 0.9...