PTF080451E
PTF080451E is LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz manufactured by Infineon.
PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869- 960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
- - Broadband internal matching Typical EDGE performance
- Average output power = 22.5 W
- Gain = 18 d B
- Efficiency = 40% Typical CW performance
- Output power at P- 1d B = 60 W
- Gain = 17 d B
- Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 450 m A, f = 959.8 MHz
0 Efficiency 55 50 45 40 35 400 k Hz 600 k Hz 30 25 20 15 10 36 38 40 42 44 46 48 50
- Modulation Spectrum (d B)
-10 -20 -30 -40 -50 -60 -70 -80 -90
Drain Efficiency (%)
- -
- -
Output Power (d Bm)
PTF080451E Package 30265
ESD: Electrostatic discharge sensitive device- observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test- verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 m A, P OUT = 22.5 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 k Hz Modulation Spectrum @ 600 k Hz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR...
