PTF080451E - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

Product Overview

Infineon Technologies AG

Part number	PTF080451E
Manufacturer	Infineon Technologies AG
File Size	158.52 KB
Description	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Datasheet	PTF080451E Datasheet
Additional preview pages of the PTF080451E datasheet.

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 0 Efficiency 55 50 45.

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Published: Apr 16, 2005 |