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PTF180601C - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz

General Description

The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band.

Full gold metallization ensures excellent device lifetime and reliability.

EDGE EVM Performance EVM & Efficiency vs.

Key Features

  • Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35% Typical CW performance - Output power at P.
  • 1dB = 75 W - Gain = 15.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power.
  • EVM RMS (Average %).
  • 3 Efficiency 30 Efficiency (%).

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Datasheet Details

Part number PTF180601C
Manufacturer Infineon Technologies AG
File Size 233.47 KB
Description LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
Datasheet download datasheet PTF180601C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability. EDGE EVM Performance EVM & Efficiency vs. Power Output VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz 4 40 Features • • Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35% Typical CW performance - Output power at P–1dB = 75 W - Gain = 15.