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PTF180901E Datasheet

Gsm/edge Rf Power Fet

Manufacturer: Infineon

PTF180901E Overview

Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier design.

PTF180901E Key Features

  • Optimized for bandwidths 1805 MHz
  • 1880 MHz and 1930 MHz
  • 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body M
  • Average output power = 35 W
  • Gain = 14.5 dB
  • Efficiency = 32%
  • EVM = 1.7% AVG
  • ACPR @ 400 KHz = -60 dBc
  • ACPR @ 600 KHz = -74 dBc Typical two-tone performance
  • Output power = 90 W PEP

More Datasheets from Infineon

See all Infineon datasheets

Part Number Description
PTF180901F GSM/EDGE RF Power FET
PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101S LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180601 LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601C LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601E LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF181301 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
PTF181301A LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
PTF191601 LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
PTF191601E LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz

PTF180901E Distributor