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PTF180901F - GSM/EDGE RF Power FET

General Description

and charts stated herein.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office.

Warnings Due to technical requirements components may contain dangerous substances.

Key Features

  • s.
  • Optimized for bandwidths 1805 MHz.
  • 1880 MHz and 1930 MHz.
  • 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power Typical EDGE performance.
  • Average output power = 35 W.
  • Gain = 14.5 dB.
  • Efficiency = 32%.

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Datasheet Details

Part number PTF180901F
Manufacturer Infineon Technologies AG
File Size 169.64 KB
Description GSM/EDGE RF Power FET
Datasheet download datasheet PTF180901F Datasheet

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Other Datasheets by Infineon Technologies AG

Part Number Description
PTF180901E GSM/EDGE RF Power FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier design. A laterally diffused single-ended GOLDMOS ® FET, it incorporates full gold metallization and integrated ESD protection to ensure excellent lifetime and reliability.