PTF180901F Overview
Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier design.
PTF180901F Key Features
- Optimized for bandwidths 1805 MHz
- 1880 MHz and 1930 MHz
- 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body M
- Average output power = 35 W
- Gain = 14.5 dB
- Efficiency = 32%
- EVM = 1.7% AVG
- ACPR @ 400 KHz = -60 dBc
- ACPR @ 600 KHz = -74 dBc Typical two-tone performance
- Output power = 90 W PEP