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PZT3904
NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: PZT3906 (PNP)
4
3 2 1
VPS05163
Type PZT3904
Maximum Ratings Parameter
Marking ZT 3904 1=B
Pin Configuration 2=C 3=E 4=C
Package SOT223
Symbol VCEO VCBO VEBO IC Ptot Tj Tstg
Value 40 60 6 200 1.5 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 72 °C Junction temperature Storage temperature
mA W °C
Thermal Resistance Junction - soldering point 1) RthJS
52
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
PZT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified.
PZT3904 Datasheet
