SKB10N60A Datasheet | Infineon

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 µs - Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners - NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability - Very soft, fast recovery anti-parallel Em Con diode - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1 for target applications - plete product spectrum and PSpice Models : http://.infineon./igbt/ PG-TO-263-3-2 Type SKB10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.3V 150°C K10N60 PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) Symbol VCE IC ICpuls - IF IFpuls VGE t SC Ptot Tj , Tstg Ts Value 600 20 10.6 40 40 21 10 42 ±20...