SKB10N60
SKB10N60 is Fast S-IGBT manufactured by Infineon.
SKP10N60 SKB10N60, SKW10N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode
- 75% lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
- Very soft, fast recovery anti-parallel Em Con diode
Type SKP10N60 SKB10N60 SKW10N60
VCE IC VCE(sat) Tj Package
600V 10A
2.2V
150°C TO-220AB
TO-263AB
TO-247AC
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature
Symbol VCE IC
ICpuls
- IF
IFpuls VGE t SC
Ptot
Tj , Tstg
Ordering Code Q67040-S4217 Q67040-S4218...
