SKP02N120
SKP02N120 is IGBT manufactured by Infineon.
SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode
- 40lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- SMPS
- NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKP02N120 SKB02N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C
1)
VCE 1200V
IC 2A
Eoff 0.11m J
Tj 150°C
Package TO-220AB TO-263AB(D2PAK)
Ordering Code Q67040-S4278 Q67040-S4279
Symbol VCE IC
Value 1200 6.2 2.8
Unit V A
ICpul s IF
9.6 9.6
4.5 2 IFpul s VGE t SC Ptot 9 ±20 10 62 V µs W
VGE = 15V, 100V≤VCC≤1200V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Power Semiconductors
SKP02N120 SKB02N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
- case Diode thermal resistance, junction
- case Thermal resistance,...
