SKP04N60 Datasheet | Infineon

SKP04N60 SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em Con diode - 75% lower Eoff pared to previous generation bined with low conduction losses - Short circuit withstand time - 10 µs - Designed for: - Motor controls - Inverter - NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability - Very soft, fast recovery anti-parallel Em Con diode P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) - plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SKP04N60 SKB04N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 4A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB Ordering Code Q67040-S4216 Q67040-S4229 Symbol VCE IC Value 600 9.4 4.9 Unit V A ICpul s IF 19 19 10 4 IFpul s VGE t SC Ptot 19 ±20 10 50 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 SKP04N60 SKB04N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on...