SMBT3904U
NPN Silicon Switching Transistor Array
High DC current gain: 0.1m A to 100m A Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors
5 6
4 with good matching in one package
plementary type: SMBT3906U (PNP)
C1 6 B2 5 E2 4
3 2 1
VPW09197
TR2 TR1
1 E1
2 B1
3 C2
EHA07178
Type SMBT3904U
Maximum Ratings Parameter
Marking s1A
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO IC Ptot Tj Tstg
Value 40 60 6 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 105 °C Junction temperature Storage temperature m A m W °C
Thermal Resistance Junction
- soldering point1) Rth JS
135
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Nov-30-2001
Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics...
