SMBTA56M Description
SMBTA56M PNP Silicon AF Transistor High breakdown voltage Low collector-emitter saturation voltage plementary type: 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS 95 °C Junction temperature Storage temperature mA A mA W °C Junction - soldering point 1) RthJS 55 K/W 1For...