SMBTA56M
SMBTA56M is PNP Silicon AF Transistor manufactured by Infineon.
PNP Silicon AF Transistor
High breakdown voltage Low collector-emitter saturation voltage plementary type: SMBTA06M (NPN)
4 5 3 2 1
VPW05980
Type SMBTA56M
Maximum Ratings Parameter
Marking s2G 1=B
Pin Configuration 2=C 3=E
Package
4 n.c. 5 = C SCT595
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 80 80 4 500 1 100 200 1 150 -65 .. 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS 95 °C Junction temperature Storage temperature m A A m A W °C
Thermal Resistance Junction
- soldering point 1) Rth JS
55
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Nov-30-2001
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C ICBO ICEO h FE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.
Unit
80 80 4
- -
100 20 100
V n A µA n A
- Collector cutoff current
VCE = 60 V, IB = 0 DC current gain 1) IC = 10 m A, VCE = 1 V IC = 100 m A, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 m A, IB = 10 m A Base-emitter voltage 1) IC = 100 m A, VCE = 1 V AC Characteristics
100 100
VCEsat VBE(ON)
- 0.25 1.2 V
- Transition frequency I C = 20 m A, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz f T Ccb
- 150 5
- MHz p F
1) Pulse test: t < 300s; D < 2%
Nov-30-2001
Total power dissipation Ptot = f (TS )
1200 m...
