SMBTA56 Datasheet | Siemens Semiconductor Group

PNP Silicon AF Transistors SMBTA 55 SMBTA 56 High breakdown voltage q Low collector-emitter saturation voltage q plementary types: SMBTA 05, SMBTA 06 (NPN) q Type SMBTA 55 SMBTA 56 Marking s2H s2G Ordering Code (tape and reel) Q68000-A3386 Q68000-A2882 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol SMBTA 55 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 60 60 Values SMBTA 56 80 80 4 500 1 100 200 330 150 Unit V m A A m A m W ˚C - 65 … + 150 285 215 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group SMBTA 55 SMBTA 56 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 m A SMBTA 55 SMBTA 56 Collector-base breakdown voltage IC = 100 µA SMBTA 55 SMBTA 56 Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 60 V VCB = 80 V VCB = 60 V, TA = 150 ˚C VCB = 80 V, TA = 150 ˚C Collector cutoff current VCE = 60 V DC current gain1) IC = 10 m A, VCE = 1 V IC = 100 m A, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 m A, IB = 10 m A Base-emitter saturation voltage1) IC = 100 m A, VCE = 1 V AC characteristics Transition frequency IC = 20 m A, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz f T Cobo - - 100 12 - - MHz p F SMBTA 55 SMBTA 56 SMBTA 55 SMBTA 56 ICE0 h FE 100 100 VCEsat VBE - - - 130 - - - 170 0.25 1.2 V V(BR)CE0 60 80 V(BR)CB0 60 80 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 20 20 100 n A n A µA µA n A - 4 - - - - - -...