SPB77N06S2-12
SPB77N06S2-12 is N-Channel Power MOSFET manufactured by Infineon.
OptiMOS® Power-Transistor
Feature
- N-Channel
- Enhancement mode
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
SPP77N06S2-12 SPB77N06S2-12
Product Summary
55 V
RDS(on)
12 mΩ
80 A
P- TO263 -3-2
P- TO220 -3-1
Type SPP77N06S2-12 SPB77N06S2-12
Package
Ordering Code
P- TO220 -3-1 Q67060-S6029
P- TO263 -3-2 Q67060-S6030
Marking 2N0612 2N0612
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=77A, VDD=25V,...
