06N03LA - Power Transistor

Infineon Technologies Corporation

Key Features

Ideal for high-frequency dc/dc converters.
N-channel.
Logic level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
Superior thermal resistance P-TO263-3-2.
175 °C operating temperature.
dv /dt rated IPB06N03LA IPI06N03LA, IPP06N03LA Product Summary V DS R DS(on),max (SMD version) ID 25 V 5.9 mΩ 50 A P-TO262-3-1 P-TO220-3-1 Type IPB06N03LA IPI06N03LA IPP06N03LA Package P-TO263-.

06N03LA power transistor by Infineon Technologies Corporation - Datasheet Preview

Datasheet Details

Part number	06N03LA
Manufacturer	Infineon Technologies Corporation
File Size	343.61 KB
Description	Power Transistor
Datasheet	06N03LA Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
06N03	25V N-Channel MOSFET	Pan Jit International
06N02C	N-Channel Enhancement Mode Power MOSFET	FNK
06N50-CB	N-CHANNEL MOSFET	UTC
06N80C3	Power Transistor	Infineon

Other Datasheets by Infineon Technologies Corporation

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance P-TO263-3-2 • 175 °C operating temperature • dv /dt rated IPB06N03LA IPI06N03LA, IPP06N03LA Product Summary V DS R DS(on),max (SMD version) ID 25 V 5.