Part BFP540FESD
Description Low profile robust silicon NPN RF bipolar transistor
Category Transistor
Manufacturer Infineon
Size 176.43 KB
Infineon
BFP540FESD

Overview

  • Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA
  • High gain Gms = 20 dB at 1.8 GHz, 2 V, 20 mA
  • OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA
  • High ESD robustness, typical 1 kV (HBM) Product validation Qualified for industrial applications according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for industrial applications according to the relevant tests of AEC-Q
  • Potential applications
  • Radio-frequency oscillators such as local oscillator in LNB
  • Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio
  • LNAs for wireless communications such as cordless phones Device information