Datasheet Details
| Part number | BFP540FESD |
|---|---|
| Manufacturer | Infineon Technologies |
| File Size | 176.43 KB |
| Description | Low profile robust silicon NPN RF bipolar transistor |
| Datasheet |
 BFP540FESD Datasheet
|
|
|
| Part number | BFP540FESD |
|---|---|
| Manufacturer | Infineon Technologies |
| File Size | 176.43 KB |
| Description | Low profile robust silicon NPN RF bipolar transistor |
| Datasheet |
BFP540FESD Datasheet
|
|
|
|
The BFP540FESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA High gain Gms = 20 dB at 1.8 GHz, 2 V, 20 mA
📁 Similar Datasheet