BFP540FESD
BFP540FESD is Low profile robust silicon NPN RF bipolar transistor manufactured by Infineon.
Low profile robust silicon NPN RF bipolar transistor
Product description
The BFP540FESD is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its high gain and ESD structure make the device suitable for applications that requires highly robustness and high performance. It remains cost petitive without promising on ease of use.
Feature list
- Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA
- High gain Gms = 20 dB at 1.8 GHz, 2 V, 20 mA
- OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA
- High ESD robustness, typical 1 kV (HBM)
Product validation
Qualified for industrial...
