BFP540ESD Description
150 Unit V mA mW °C 1 2013-09-13 BFP540ESD Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
BFP540ESD is Low Noise Silicon Bipolar RF Transistor manufactured by Infineon.
| Manufacturer | Part Number | Description |
|---|---|---|
Infineon |
BFP540 | Low Noise Silicon Bipolar RF Transistor |
Infineon |
BFP540F | NPN Silicon RF Transistor |
Infineon |
BFP540FESD | Low profile robust silicon NPN RF bipolar transistor |
150 Unit V mA mW °C 1 2013-09-13 BFP540ESD Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.