BFP540ESD Overview
150 Unit V mA mW °C 1 2013-09-13 BFP540ESD Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
BFP540ESD datasheet by Infineon.
| Part number | BFP540ESD |
|---|---|
| Datasheet | BFP540ESD-Infineon.pdf |
| File Size | 616.84 KB |
| Manufacturer | Infineon |
| Description | Low Noise Silicon Bipolar RF Transistor |
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150 Unit V mA mW °C 1 2013-09-13 BFP540ESD Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BFP540 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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BFP540F | NPN Silicon RF Transistor | Infineon Technologies AG |
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BFP540FESD | Low profile robust silicon NPN RF bipolar transistor | Infineon Technologies |
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