Full PDF Text Transcription for BSC079N10NSG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BSC079N10NSG. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet.co.kr BSC079N10NS G OptiMOS™2 Power-Transistor Features • N-channel, Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance ...
View more extracted text
cellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 7.
BSC079N10NSG Datasheet
