BSC079N10NSG Datasheet | Infineon

.Data Sheet.co.kr BSC079N10NS G Opti MOS™2 Power-Transistor Features - N-channel, Normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 150 °C operating temperature - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 7.9 100 V mΩ A - Ideal for high-frequency switching and synchronous rectification - Halogen-free according to IEC61249-2-21 Type BSC079N10NS G Package PG-TDSON-8 Marking 079N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R th JA=45 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 100 64 13.4 400 377 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=50 A, R GS=25 Ω m J V W °C T C=25 °C 156 -55 ... 150 55/150/56 J-STD20 and JESD22 Rev. 1.05 page 1 2009-11-03 Datasheet pdf - http://..net/ .Data...