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BSC079N10NSG - OptiMOS2 Power-Transistor

Datasheet Summary

Features

  • N-channel, Normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number BSC079N10NSG
Manufacturer Infineon Technologies
File Size 501.03 KB
Description OptiMOS2 Power-Transistor
Datasheet download datasheet BSC079N10NSG Datasheet
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www.DataSheet.co.kr BSC079N10NS G OptiMOS™2 Power-Transistor Features • N-channel, Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 7.
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