BSC090N03MSG
BSC090N03MSG is Power-MOSFET manufactured by Infineon.
BSC090N03MS G
Opti MOS™3 M-Series Power-MOSFET
Product Summary
Features
- Optimized for 5V driver application (Notebook, VGA, POL)
- Low FOMSW for High Frequency SMPS
- 100% avalanche tested
- N-channel
- Very low on-resistance R DS(on) @ V GS=4.5 V
- Excellent gate charge x R DS(on) product (FOM)
- Qualified according to JEDEC1) for target applications
VDS RDS(on),max
30 V
VGS=10 V VGS=4.5 V
9 m W 11.2 48 A
PG-TDSON-8
- Superior thermal resistance
- Pb-free plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
Type BSC090N03MS G
Package PG-TDSON-8
Marking 090N03MS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100...
