BSC093N04LSG
BSC093N04LSG is Power-MOSFET manufactured by Infineon.
Opti MOS™3 Power-Transistor
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC1) for target applications
- N-channel; Logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Superior thermal resistance
- 100% Avalanche tested
- Pb-free plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
BSC093N04LS G
Product Summary
VDS RDS(on),max ID
40 9.3 49
PG-TDSON-8
V m W A
Type BSC093N04LS G
Package PG-TDSON-8
Marking 093N04LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
V GS=10 V, T A=25 °C, R th JA=50...
