BSC094N03SG Datasheet | Infineon

BSC094N03S G Opti MOS®2 Power-Transistor Features - Fast switching MOSFET for SMPS - Optimized technology for notebook DC/DC converters - Qualified according to JEDEC for target applications - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - Superior thermal resistance - Avalanche rated - Pb-free plating; Ro HS pliant Type BSC094N03S G Package P-TDSON-8 Ordering Code Q67042 S4291 1) Product Summary V DS R DS(on),max ID 30 9.4 35 V mΩ A .. P-TDSON-8 Marking 094N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R th JA=45 K/W 2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation I D,pulse E AS dv /dt V GS P tot T C=25 °C T A=25 °C, R th JA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.01 page 1 T j, T stg T C=25 °C3) I D=35 A, R GS=25 Ω I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Value 35 35 14.6 140 90 6 ±20 52 2.8 -55 ... 150 55/150/56 2004-12-15 °C m J k V/µs V W Unit A BSC094N03S G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R th JC R th JA minimal footprint 6 cm2 cooling area2) 2.4 62 45 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=25 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=35 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=35 A 30 1.2 1.6 0.1 2 1 µA V 10 10 11.2 7.8 1 53 100 100 14 9.4 Ω S...