BSC252N10NSFG
BSC252N10NSFG is Power-Transistor manufactured by Infineon.
BSC252N10NSF G
OptiMOS™2 Power-Transistor
Features
- Very low gate charge for high frequency applications
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID PG-TDSON-8 100 25.2 40 V mΩ A
..
- Low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
Type BSC252N10NSF G
Package PG-TDSON-8
Marking 252N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T...
