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BSC252N10NSFG - Power-Transistor

Key Features

  • Very low gate charge for high frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC252N10NSF G OptiMOS™2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 25.2 40 V mΩ A www.DataSheet4U.