Part BSC252N10NSFG
Description Power-Transistor
Category Transistor
Manufacturer Infineon
Size 433.09 KB
Infineon

BSC252N10NSFG Overview

Key Features

  • Very low gate charge for high frequency applications
  • Optimized for dc-dc conversion
  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 25.2 40 V mΩ A
  • Low on-resistance R DS(on)
  • 150 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application