BSC265N10LSFG
BSC265N10LSFG is Power-Transistor manufactured by Infineon.
BSC265N10LSF G
OptiMOS™2 Power-Transistor
Features
- N-channel, logic level
- Very low gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A
- Ideal for high-frequency switching and synchronous rectification
- Low on-resistance R DS(on)
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- 150 °C operating temperature
- Halogen-free according to IEC61249-2-21
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Type BSC265N10LSF G
Package PG-TDSON-8
Marking 265N10LS
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W...
