BSC265N10LSFG - Power-Transistor

Datasheet Summary

Features

N-channel, logic level.
Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A.
Ideal for high-frequency switching and synchronous rectification.
Low on-resistance R DS(on).
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	BSC265N10LSFG
Manufacturer	Infineon Technologies
File Size	447.03 KB
Description	Power-Transistor
Datasheet	BSC265N10LSFG Datasheet
Additional preview pages of the BSC265N10LSFG datasheet.

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BSC265N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • 150 °C operating temperature • Halogen-free according to IEC61249-2-21 www.DataSheet4U.

Published: Jun 7, 2011 |