Datasheet4U Logo Datasheet4U.com

BSC265N10LSFG - Power-Transistor

Key Features

  • N-channel, logic level.
  • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A.
  • Ideal for high-frequency switching and synchronous rectification.
  • Low on-resistance R DS(on).
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSC26-0201 BSC26-0201 ETC
BSC26-1001 BSC26-1001 ETC
BSC26-1058 BSC26-1058 ETC
BSC26-1307 BSC26-1307 ETC
BSC26-1502 BSC26-1502 ETC

Other Datasheets by Infineon

Part Number Description
BSC200P03LSG Power-Transistor
BSC205N10LSG Power-Transistor
BSC252N10NSFG Power-Transistor
BSC014N06NS Power-Transistor
BSC016N03LSG Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC265N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • 150 °C operating temperature • Halogen-free according to IEC61249-2-21 www.DataSheet4U.