BSO080P03SH
BSO080P03SH is Power-Transistor manufactured by Infineon.
Opti MOS™-P Power-Transistor
Features
- P-Channel
- Enhancement mode
- Logic level
- 150°C operating temperature
- Qualified according JEDEC for target applications
- Pb-free lead plating; Ro HS pliant
- Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
BSO080P03S H
-30 V 8 m: -14.9 A
PG-DSO-8
Type BSO080P03S H
Package P-DSO-8
Marking lead free 080P3S Yes
Halogen free Yes packing dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C1) T A=70 °C1) T A=25 °C2)
Value
Unit
10 secs steady state
-14.9
-12.6...
