BSO080P03S Datasheet | Infineon

Opti MOS®-P Small-Signal-Transistor Features - P-Channel - Enhancement mode - Logic level - 150°C operating temperature - Avalanche rated - dv /dt rated - Ideal for fast switching buck converter Product Summary V DS R DS(on),max ID -30 8 -14.9 V mΩ A P-DSO-8 Type BSO080P03S Package P-DSO-8 Ordering Code Q67042-S4232 Marking 080P3S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value ≤10 secs Continuous drain current ID T A=25 °C1) T A=70 °C1) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C2) I D=-14.9 A, R GS=25 Ω I D=-14.9 A, V DS=20 V, di /dt =-200 A/µs, T j,max=150 °C -14.9 -11.9 -60 248 m J steady state -12.6 -10 A Unit Reverse diode dv /dt dv /dt -6 k V/µs Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg T A=25 °C1) 2.5 ±25 1.79 -55 ... 150 55/150/56 V W °C Rev. 1.0 page 1 2004-01-21 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R th JS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-250 µA V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-25 V, V DS=0 V V GS=-10 V, I D=-14.9 A |V DS|>2|I D|R DS(on)max, I D=-14.9 A -30 -1 -1.5 -2.2 V 35 K/W Values typ. max. Unit R th JA - - -...