Datasheet4U Logo Datasheet4U.com

BSO080P03NS3G - Power-Transistor

Datasheet Summary

Features

  • single P-Channel in SO8.
  • Qualified according JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – BSO080P03NS3G

Datasheet Details

Part number BSO080P03NS3G
Manufacturer Infineon Technologies
File Size 531.81 KB
Description Power-Transistor
Datasheet download datasheet BSO080P03NS3G Datasheet
Additional preview pages of the BSO080P03NS3G datasheet.

📁 Similar Datasheet

  • BSO080P03S - OptiMOS-P Small-Signal-Transistor (Infineon Technologies AG)
  • BSO033N03MSG - Power-MOSFET (Infineon)
  • BSO052N03S - OptiMOS2 Power-Transistor (Infineon Technologies AG)
  • BSO064N03S - OptiMOS2 Power-Transistor (Infineon Technologies AG)
  • BSO072N03S - OptiMOS2 Power-Transistor (Infineon Technologies AG)
  • BSO094N03S - OptiMOS2 Power-Transistor (Infineon Technologies AG)
  • BSO104N03S - Fast switching MOSFET (Infineon)
  • BSO119N03S - OptiMOS2 Power-Transistor (Infineon Technologies AG)
  • BSO130P03S - OptiMOS-P Small-Signal-Transistor (Infineon Technologies AG)
  • BSO150N03 - OptiMOS2 Power-Transistor (Infineon Technologies AG)
Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
OptiMOS™3 P3-Power-Transistor Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 BSO080P03NS3 G Product Summary VDS RDS(on),max ID VGS=-10 V VGS=-6 V -30 V 8.0 mW 11.4 -14.
Published: |