BSO080P03NS3G
BSO080P03NS3G is Power-Transistor manufactured by Infineon.
Opti MOS™3 P3-Power-Transistor
Features
- single P-Channel in SO8
- Qualified according JEDEC1) for target applications
- 150°C operating temperature
- V GS=25 V, specially suited for notebook applications
- Pb-free plating; Ro HS pliant
- applications: battery management, load switching
- Halogen-free according to IEC61249-2-21
BSO080P03NS3 G
Product Summary
VDS RDS(on),max
VGS=-10 V VGS=-6 V
-30 V 8.0 m W 11.4 -14.8 A
PG-DSO-8
Type BSO080P03NS3 G
Package PG-DSO-8
Marking 080P3NS
Lead free Yes
Halogen free Yes
Packing non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1) Pulsed drain current2)
ID I D,pulse
V GS=-10 V, T A=25 °C V GS=-10 V, T A=70 °C V GS=-6 V, T A=25 °C V GS=-6 V, T A=70 °C T A=25 °C
Avalanche energy, single pulse
E AS
I D=-14.8 A, R GS=25...
