BSO110N03MSG Datasheet | Infineon

BSO110N03MS G Opti MOS™3 M-Series Power-MOSFET Features - Optimized for 5V driver application (Notebook, VGA, POL) - Low FOMSW for High Frequency SMPS - 100% Avalanche tested - N-channel - Very low on-resistance R DS(on) @ V GS=4.5 V - Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V 30 V 11 mΩ 13.9 12.1 A PG-DSO-8 - Qualified for consumer level application - Pb-free plating; Ro HS pliant - Halogen-free according to IEC61249-2-21 Type BSO110N03MS G Package PG-DSO-8 Marking 110N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D V GS=10 V, T A=25 °C V GS=10 V, T A=90 °C V GS=4.5 V, T A=25 °C V GS=4.5 V, T A=90 °C Pulsed drain current2) Avalanche current, single pulse3) I D,pulse I AS T A=25 °C T A=25 °C Avalanche energy, single...