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BSR302N - Small-Signal-Transistor

Key Features

  • N-channel.
  • Enhancement mode.
  • Logic level (4.5V).
  • Avalanche rated.
  • Footprint compatible to SOT23.
  • dv /dt rated.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to AEC Q101 BSR302N Product Summary V DS R DS(on),max ID V GS=10 V V GS=4.5 V 30 V 23 mΩ 36 3.7 A PG-SC-59 3 12 Type BSR302N Package PG-SC-59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LEs Maximum ratings, at T j=25 °C, unless othe.

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Datasheet Details

Part number BSR302N
Manufacturer Infineon
File Size 133.59 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSR302N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS®2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V) • Avalanche rated • Footprint compatible to SOT23 • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 BSR302N Product Summary V DS R DS(on),max ID V GS=10 V V GS=4.5 V 30 V 23 mΩ 36 3.7 A PG-SC-59 3 12 Type BSR302N Package PG-SC-59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LEs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature ESD Class E AS I D=3.7 A, R GS=25 Ω dv /dt I D=3.