BSS806N - Small-Signal-Transistor

Infineon

Key Features

N-channel.
Enhancement mode.
Ultra Logic level (1.8V rated).
Avalanche rated.
Qualified according to AEC Q101.
100% lead-free; RoHS compliant.
Halogen-free according to IEC61249-2-21 BSS806N Product Summary V DS R DS(on),max ID V GS=2.5 V V GS=1.8 V 20 V 57 mΩ 82 2.3 A PG-SOT23 3 1 2 Type BSS806N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Paramet.

BSS806N small-signal-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	BSS806N
Manufacturer	Infineon
File Size	229.61 KB
Description	Small-Signal-Transistor
Datasheet	BSS806N Datasheet

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OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS806N Product Summary V DS R DS(on),max ID V GS=2.5 V V GS=1.8 V 20 V 57 mΩ 82 2.3 A PG-SOT23 3 1 2 Type BSS806N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking YEs Avalanche energy, single pulse E AS I D=2.3 A, R GS=25 Ω Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class dv /dt I D=2.