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BSS806NE - Small-Signal-Transistor

Key Features

  • N-channel.
  • Enhancement mode.
  • Ultra Logic level (1.8V rated).
  • ESD protected.
  • Avalanche rated.
  • Qualified according to AEC Q101.
  • 100% lead-free; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 BSS806NE Product Summary VDS RDS(on),max ID VGS=2.5 V VGS=1.8 V 20 V 57 mW 82 2.3 A PG-SOT23 3 1 2 Type BSS806NE Package SOT23 Tape and Reel H6327: 3000 pcs/ reel Marking YIs Maximum ratings, at T j=25 °C, unless other.

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Datasheet Details

Part number BSS806NE
Manufacturer Infineon
File Size 508.74 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSS806NE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS806NE Product Summary VDS RDS(on),max ID VGS=2.5 V VGS=1.8 V 20 V 57 mW 82 2.3 A PG-SOT23 3 1 2 Type BSS806NE Package SOT23 Tape and Reel H6327: 3000 pcs/ reel Marking YIs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Halogen Free Yes Packing Non dry Value 2.3 1.9 9.3 Unit A Avalanche energy, single pulse E AS I D=2.3 A, R GS=25 W 10.