BTS780GP
BTS780GP is H-bridge manufactured by Infineon.
Overview
Features
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- switch driver Free configureable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDS ON @ 25 °C: High-side switch: typ. 34 mΩ, P-TO263-15-1 Low-side switch: typ. 15 mΩ High peak current capability of typ. 44 A @ 25 °C Low quiescent current of typ. 15 µA @ 25 °C SMD-Power-Package, optimized for small size and thermal performance Load and GND-short-circuit-protected Operates up to 36 V 2-Bit status flag diagnosis Overtemperature shut down with hysteresis Short-circuit detection and diagnosis Open-load detection and diagnosis C-MOS patible inputs Internal clamp diodes Isolated sources for external current sensing Over- and under-voltage detection with hysteresis Fast low-side switches for PWM Ordering Code Q67006-A9320 Package P-TO263-15-1
Type BTS 780 GP Description
The BTS 780 GP is part of the Trilith IC family containing one double high-side switch and two low-side switches in one P-TO263-15-1 package. “Silicon instead of heatsink” bees true The ultra low RDS ON of this device avoids power dissipation. It saves costs in mechanical construction and mounting and increases the efficiency.
Data Sheet
1999-06-22
BTS 780 GP
The high-side switches are produced in the SMART SIPMOS® technology. They are fully protected and contain the signal conditioning circuitry for diagnosis (the parable standard high-side product is the BTS 734L1). For minimized RDS ON the two low-side switches are produced in S-FET logic level technology (the parable standard product is the BUZ 100SL). Each drain of these three chips is mounted on separated leadframes (see Figure 1). The sources of all four power transistors are connected to separate pins.
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So the BTS 780 GP can be used in H-Bridge configuration as well as in any other switch configuration. Moreover, it is possible to add current sense resistors. All these features open a broad range of automotive and industrial...