BTS780 Datasheet | Siemens Semiconductor Group

Overview Features - - - - Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDS ON @ 25 °C: High-side switch: typ. 35 mΩ, Low-side switch: typ. 15 mΩ Very high peak current capability Very low quiescent current Space- and thermal optimized SMD-Power-Package Load and GND-short-circuit-protected Operates up to 40 V 2-Bit status flag diagnosis Overtemperature shut down with hysteresis Short-circuit detection and diagnosis Open-load detection and diagnosis C-MOS patible inputs Internal clamp diodes Isolated sources for external current sensing Over- and under-voltage detection with hysteresis Ordering Code on request BTS 780 P-TO263-15-1 - - - - - - - - - - - - - Type BTS 780 Description Package P-TO263-15-1 The BTS 780 is a Trilith IC contains one double high-side switch and two low-side switches in one P-TO263-15-1. “Silicon instead of heatsink” bees true The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and increases the efficiency. The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. It is fully protected and contains the signal conditioning circuitry for diagnosis (the parable standard high-side product is the BTS 734L1). Semiconductor Group 1 1998-02-01 BTS 780 For minimized RDS ON the two low-side switches are produced in the SIEMENS S-Fet logic level technology (the parable standard product is the BUZ 100SL). Each drain of these three chips is mounted on separated leadframes (see pin configuration). The sources of all four power transistors are connected to separate pins. So the BTS 780 can be used in H-Bridge configuration as well as in any other switch configuration. Moreover, it is possible to add current sense resistors. All these features open a broad range of automotive and industrial applications. Semiconductor Group 1998-02-01 BTS 780 Molding pound SL1 SL1 GL1 GND GH1 ST1 SH1 1 2 3 4...