IDB10S60C Description
IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode.
IDB10S60C Key Features
- Revolutionary semiconductor material
- Silicon Carbide
- Switching behavior benchmark
- No reverse recovery/ No forward recovery
- No temperature influence on the switching behavior
- High surge current capability
- Pb-free lead plating; RoHs pliant
- Qualified according to JEDEC1) for target