IDB10S60C - 2nd Generation thinQ SiC Schottky Diode

Features

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery/ No forward recovery.
No temperature influence on the switching behavior.
High surge current capability.
Pb-free lead plating; RoHs compliant www. DataSheet4U. net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK.
Qualified according to JEDEC1) for target.

IDB10S60C 2nd Generation thinQ SiC Schottky Diode by Infineon Technologies - Datasheet Preview — Datasheet preview – IDB10S60C

Datasheet Details

Part number	IDB10S60C
Manufacturer	Infineon
File Size	320.51 KB
Description	2nd Generation thinQ SiC Schottky Diode
Datasheet	IDB10S60C Datasheet
Additional preview pages of the IDB10S60C datasheet.

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Full PDF Text Transcription

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IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant www.DataSheet4U.

Published: Jul 7, 2011 |