IDB10S60C Datasheet | Infineon

Features - Revolutionary semiconductor material - Silicon Carbide - Switching behavior benchmark - No reverse recovery/ No forward recovery - No temperature influence on the switching behavior - High surge current capability - Pb-free lead plating; Ro Hs pliant ..net Product Summary V DC Qc IF 600 24 10 V n C A D2PAK - Qualified according to JEDEC1) for target applications - Breakdown voltage tested at 5m A2) thin Q! 2G Diode designed for fast switching applications like: - CCM PFC - Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<135 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 76 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i²t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Rev. 2.1 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 32 350 29 600 A2s V V/ns W °C 2009-01-07 VR=0…480V T C=25 °C 50 83 -55 ... 175 page 1 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R th JC R th JA Thermal resistance, junction - ambient SMD version, device on PCB, minimal Footprint SMD version, device on PCB, 6 cm2 cooling area3) reflow MSL1 1.8 62 K/W Values typ. max. Unit - 35 - Soldering temperature, reflowsoldering @ 10sec. T sold - - °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.14 m A I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.5 1.7 1.4 1.7 2.1 140 µA V V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time4) Total capacitance Qc tc C V...