IDB18E120 - Fast Switching Emitter Controlled Diode

Datasheet Details

Part number	IDB18E120
Manufacturer	Infineon
File Size	359.42 KB
Description	Fast Switching Emitter Controlled Diode
Datasheet	IDB18E120 Datasheet
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Fast Switching Emitter Controlled Diode Feature • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling * RoHS compliant IDB18E120 Product Summary VRRM 1200 IF VF Tjmax 18 1.65 150 V A V °C PG-TO263-3-2 2 1 3 Type IDB18E120 Package Ordering Code Marking Pin 1 PIN 2 PIN 3 PG-TO263-3-2 - D18E120 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C VRRM IF Surge non repetitive forward current IFSM TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current IFRM TC=25°C, tp limited by Tjmax, D=0.

Published: Jul 7, 2011 |