Datasheet4U Logo Datasheet4U.com

IDC04S60C - 2nd generation thinQ! SiC Schottky Diode

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2000 All Rights Reserved et4U.com DataSheet4U.com Att

Key Features

  • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability.

📥 Download Datasheet

Datasheet Details

Part number IDC04S60C
Manufacturer Infineon
File Size 226.95 KB
Description 2nd generation thinQ! SiC Schottky Diode
Datasheet download datasheet IDC04S60C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IDC08D120T6M Diode Infineon
IDC08D120T8M Diode Infineon
IDC-2512 Surface Mount Inductors Vishay Siliconix
IDC-5020 High Current / Surface Mount Inductor Vishay Siliconix
IDC-7328 High Current / Surface Mount Inductor Vishay Siliconix

Other Datasheets by Infineon

Part Number Description
IDC04S60CE Schottky Diode
IDC05S120E Schottky Diode
IDC05S60C 2nd generation thinQ! SiC Schottky Diode
IDC05S60CE Schottky Diode
IDC06S60C 2nd generation thinQ! SiC Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IDC04S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: • SMPS, PFC, snubber C A Chip Type IDC04S60C VBR 600V IF 4A Die Size 1.146 x 0.968 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment DataSheet4U.com 1.146x 0.968 mm 0.909 x 0.731 1.11 / 0.