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IDC04S60CE
2nd generation thinQ!TM SiC Schottky Diode
Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery www.DataSheet4U.net • High surge current capability • Applications: • SMPS, PFC, snubber
C A
Chip Type
IDC04S60CE
VBR 600V
IF 4A
Die Size 1.146 x 0.968 mm2
Package sawn on foil
Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.146x 0.968 0.909 x 0.731 1.
IDC04S60CE Datasheet
