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IDC08S60C
2nd generation thinQ!TM SiC Schottky Diode
FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: • SMPS, PFC, snubber
C A
Chip Type
IDC08S60C
VBR 600V
IF 8A
Die Size 1.658 x 1.52 mm2
Package sawn on foil
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment
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1.658x 1.52 mm 1.421 x 1.283 2.52 / 1.
IDC08S60C Datasheet
