IDC08S60CE
IDC08S60CE is Schottky Diode manufactured by Infineon.
Features
: Revolutionary semiconductor material Silicon Carbide
- Switching behavior benchmark
- No reverse recovery
- No temperature influence on the switching behavior
- No forward recovery ..net
- High surge current capability
- Applications:
- SMPS, PFC, snubber
Chip Type
VBR 600V
IF 8A
Die Size 1.658 x 1.52 mm2
Package sawn on foil
Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Remended storage environment 1.658x 1.52 1.421 x 1.283 2.52 355 100 2682 Photoimide 3200 nm Al Ni Ag
- system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009
Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current limited by Tvjmax Surge non repetitive forward current sine halfwave Repetitive peak forward current limited by Tvjmax Non-repetitive peak forward current Operating junction and storage temperature Symbol VRRM VDC IF IF,SM IF,RM IF,max Tvj , Tstg Tvj < 150°C TC =25° C , t P =10 ms TC = 100° C , Tvj = 1 50 ° C , D= 0 . 1 TC =25° C , t p = 1 0µs Condition Tvj = 25 °C Value 600 600 8 59 35 264 -55...+175 °C A Unit V
Static Characteristics (tested on wafer) Parameter Reverse current Diode forward voltage Symbol IR VF Conditions V R = 60 0 V IF=8A Tvj =25°C Tvj =25°C Value min. Typ. 1 1.5 max. 100 1.7 Unit µA V
Dynamic Characteristics, at T v j = 25 °C, unless otherwise specified, tested at ponent Parameter Symbol Conditions Value min. Typ. 19 max. Unit
Total capacitive charge
IF <=IF,max di/dt=200A/µs VR=400V
T v j = 1 50 °C n C
Switching time 1) tc
T v j = 1 50 °C VR=1V 310 50 50
<10 ns
Total...
