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IDC08S60CE - Schottky Diode

General Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.

Key Features

  • Revolutionary semiconductor material Silicon Carbide.
  • Switching behavior benchmark.
  • No reverse recovery.
  • No temperature influence on the switching behavior.
  • No forward recovery www. DataSheet4U. net.
  • High surge current capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery www.DataSheet4U.net • High surge current capability • Applications: • SMPS, PFC, snubber C A Chip Type IDC08S60CE VBR 600V IF 8A Die Size 1.658 x 1.52 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.658x 1.52 1.421 x 1.283 2.